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PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques HEXFET(R) Power MOSFET VDSS 30V RDS(on) max 9.0m@VGS = 10V 11m@VGS = 4.5V Qg 16nC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT DirectFET ISOMETRIC Description The IRF6608 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C PD @TC = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation g Power Dissipation g Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 12 55 13 10 100 2.1 1.4 42 0.017 -40 to + 150 Units V A W W/C C Thermal Resistance Parameter RJA RJA RJA RJC RJ-PCB Junction-to-Ambient fj Junction-to-Ambient gj Junction-to-Ambient hj Junction-to-Case ij Junction-to-PCB Mounted Typ. --- 12.5 20 --- 1.0 Max. 58 --- --- 3.0 --- Units C/W Notes through are on page 2 www.irf.com 1 3/31/04 IRF6608 BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 --- --- --- 1.0 --- --- --- --- --- 28 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 29 7.0 8.0 --- -5.4 --- --- --- --- --- 16 4.6 1.4 5.3 4.7 6.7 11 13 12 16 3.4 2120 440 260 --- --- 9.0 11 3.0 --- 30 100 100 -100 --- 24 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 8.8A S nA V mV/C A V Conditions VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 13A e VGS = 4.5V, ID = 10A e VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 15V, ID = 8.8A See Fig. 16 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5V e ID = 8.8A Clamped Inductive Load = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche Current c Repetitive Avalanche Energy c Typ. --- --- --- Max. 54 8.8 0.21 Units mJ A mJ Diode Characteristics Parameter IS ISM VSD trr Qrr Notes: Min. Typ. Max. Units --- --- --- --- --- --- --- 0.94 31 33 13 A 100 1.2 47 50 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge p-n junction diode. TJ = 25C, IS = 8.8A, VGS = 0V e TJ = 25C, IF = 8.8A di/dt = 100A/s e Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.38mH Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board. RG = 25, IAS = 8.8A. Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. R is measured at TJ of approximately 90C. 2 www.irf.com IRF6608 100 TOP VGS 10V 7.0V 4.5V 3.8V 3.5V 3.2V 2.9V 2.7V 100 ID, Drain-to-Source Current (A) BOTTOM ID, Drain-to-Source Current (A) 2.7V 10 TOP VGS 10V 7.0V 4.5V 3.8V 3.5V 3.2V 2.9V 2.7V 10 2.7V 30s PULSE WIDTH Tj = 25C 1 BOTTOM 30s PULSE WIDTH Tj = 150C 10.0 100.0 1 0.1 1.0 10.0 100.0 0.1 1.0 Fig 1. Typical Output Characteristics 100.0 Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance ID = 12A VGS = 10V ID, Drain-to-Source Current () T J = 150C 1.5 T J = 25C 10.0 (Normalized) 1.0 VDS = 20V 30s PULSE WIDTH 1.0 2.5 2.8 3.0 3.3 3.5 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 12 ID= 8.8A VGS, Gate-to-Source Voltage (V) 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 10 8 6 4 2 0 VDS= 24V VDS= 15V C, Capacitance (pF) Ciss 1000 Coss Crss 100 1 10 100 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF6608 100.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 10.0 T J = 150C ID, Drain-to-Source Current (A) 100 10 100sec T J = 25C 1.0 1msec 1 Tc = 25C Tj = 150C Single Pulse 0 1 10 10msec VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 60 2.2 Fig 8. Maximum Safe Operating Area VGS(th) Gate threshold Voltage (V) 50 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID , Drain Current (A) 40 ID = 250A 30 20 10 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Temperature (C) T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature 100 Fig 10. Threshold Voltage vs. Temperature D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 4 Ri (C/W) 2.023 19.48 21.78 14.71 i (sec) 0.000678 0.240237 2.0167 58 0.1 1 2 3 4 Ci= i/Ri Ci i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF6608 R DS(on) , Drain-to -Source On Resistance ( ) EAS, Single Pulse Avalanche Energy (mJ) 0.025 240 200 0.020 ID 3.3A 3.8A BOTTOM 8.8A TOP 160 0.015 120 80 0.010 ID = 12A 40 0.005 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature (C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current 15V LD VDS DRIVER VDS L + VDD - RG VGS 20V D.U.T IAS tp + V - DD A D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% 0.01 Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit VDS 90% 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Fig 14b. Switching Time Waveforms Id Vds Vgs 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 5 IRF6608 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. 1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain 6 5 7 3 4 1 2 6 www.irf.com IRF6608 DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.79 G 0.75 0.57 H 0.53 0.30 J 0.26 K O.88 0.98 2.28 L 2.18 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.023 0.024 0.023 0.024 0.030 0.031 0.021 0.022 0.010 0.012 0.035 0.039 0.086 0.090 0.023 0.028 0.001 0.003 0.003 0.007 Note: Controlling dimensions are in mm DirectFET Part Marking www.irf.com 7 IRF6608 DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MAX MAX MIN MIN MAX 12.992 A 6.9 N.C N.C 330.0 177.77 N.C N.C 0.795 0.75 B N.C N.C 20.2 19.06 N.C N.C 0.504 C 0.53 0.50 12.8 13.5 0.520 13.2 12.8 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 3.937 2.31 E N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 N.C 12.4 11.9 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 N.C 0.606 15.4 12.01 Loaded Tape Feed Direction NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/04 8 www.irf.com |
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